We have fabricated,
metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts were
made by dc magnetron sputtering technique, and hafnium
dioxide (HfO2) interfacial
insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic
layer depositon (ALD) technique.
The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reduced
with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO2 layer thickness. The
barrier increment in the rectifying contacts is very important for an adequate
barrier height in FET operation and is useful for the gates of the metal-semiconductor
field-effect transistors
or also show promise as small signal zero-bias rectifiers and microwave mixers.
Metal-Oxide-semiconductor structures GaAs semiconductor Hafnia HfO2 Atomic layer deposition (ALD) technique
Primary Language | English |
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Subjects | Engineering |
Journal Section | Research Articles |
Authors | |
Publication Date | December 28, 2018 |
Published in Issue | Year 2018 Volume: 2 Issue: 2 |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.